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| IL352 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features * Good CTR Linearly Depending on Forward Current * Isolation Test Voltage, 3000 VRMS * High Collector-Emitter Voltage, VCEO = 30 V * Low Saturation Voltage * Fast Switching Times * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC N.C 1 A2 C3 N.C 4 8B 7 C 6 5E i179027 e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code S * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 The coupling device is designed for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled must not exceed the maximum permissible reference voltages. Description The IL352 optically coupled isolator that features a high current transfer ratio, low coupling capacitance and high isolation voltage. It has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector. The component is housed in a thin line package. Order Information Part IL352 Remarks CTR > 100 %, SMD-8 For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage DC forward current Total power dissipation Derate linearly from 25 C Test condition Symbol VR IF Pdiss Value 6.0 60 50 0.66 Unit V mA mW mW/C Document Number 83624 Rev. 1.5, 26-Oct-04 www.vishay.com 1 IL352 Vishay Semiconductors Output Parameter Collector-emitter voltage Emitter-base voltage Collector current t 1.0 ms Total power dissipation Derate linearly from 25 C Test condition Symbol VCE VEBO IC IC Pdiss Value 70 7.0 50 100 150 2.5 Unit V V mA mA mW mW/C Coupler Parameter Isolation test voltage (between emitter and detector referred to climate DIN 40046, part 2, Nov. 74) Isolation resistance Test condition t = 1.0 sec. Symbol VISO Value 3000 Unit VRMS VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C RIO RIO Tstg Tamb Tj 1012 1011 - 40 to + 150 - 40 to + 85 100 260 C C C C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max 10 s, Dip soldering distance to seating plane 1.5 mm Tsld Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 6.0 V VR = 0, f = 1.0 MHz Symbol VF IR CO Min Typ. 1.3 0.1 25 Max 1.5 10 Unit V A pF Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter leakage current Collector-base breakdown voltage Collector-emitter capacitance Test condition IC = 1.0 mA, IE = 100 A IC = 1.0 mA, IE = 100 A VCE = 10 V, IF = 0, TA = 25 C VCE = 30 V, IF = 0, TA = 85 C IC = 100 A VCE = 0 Symbol BVCEO BVECO ICEO ICEO BVCBO CCE 70 6.0 Min 30 7.0 5.0 50 500 Typ. Max Unit V V nA A V pF www.vishay.com 2 Document Number 83624 Rev. 1.5, 26-Oct-04 IL352 Vishay Semiconductors Coupler Parameter Saturation voltage collectoremitter Collector-emitter capacitance Capacitance (input-output) Test condition IF = 10 mA, IC = 0.5 mA VCE = 0 f = 1.0 MHz Symbol VCEsat CCE CIO 6.0 0.5 Min Typ. Max 0.3 Unit V pF pF Current Transfer Ratio Parameter DC Current Transfer Ratio Test condition IF = 10 mA, VCE = 10 V IF = 1.0 mA, VCE = 10 V Symbol CTRDC CTRDC Min 100 34 Typ. Max Unit % % Switching Characteristics Parameter Switching time, non-saturated Test condition IC = 2.0 mA, RE = 100 , VCC = 10 V, RH 50 % Symbol ton, toff Min Typ. 10 Max Unit s Typical Characteristics (Tamb = 25 C unless otherwise specified) IF VCC = 10 V IF = 2 mA t PHL VO tPLH VO F = 10 KHz, DF = 50% RE = 100 tS 50% iIL352_02 tD iIL352_01 tR tF Figure 1. Switching Waveform Figure 2. Switching Schematic Document Number 83624 Rev. 1.5, 26-Oct-04 www.vishay.com 3 IL352 Vishay Semiconductors 1.4 VF - Forward Voltage - V 1.5 Ta = -55C NCTR - Normalized CTR 1. 3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Normalized to: VCE = 10 V, IF = 10 mA TA= 25C 1.0 CTRce(sat) VCE = 0.4 V TA= 70C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 I F - LED Current - mA 100 Ta = 25C Ta = 85C 1 10 IF - Forward Current - mA 100 iIL352_06 iIL352_03 Figure 3. Forward Voltage vs. Forward Current Figure 6. Normalized Non-saturated and saturated CTR vs. LED Current 1.5 NCTR - Normalized CTR NCTR - Normalized CTR 1.0 Normalized to: VCE = 10 V, IF = 10 mA TA= 25C CTRce(sat) VCE = 0.4 V 1.5 Normalized to: V CE = 10 V, I F = 10 mA, TA = 25C CTRce(sat) VCE = 0.4 V 1.0 TA = 85C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100 I F - LED Current - mA 0.5 NCTR(SAT) NCTR .1 1 10 IF - LED Current - mA 100 0.0 iIL352_04 iIL352_07 Figure 4. Normalized Non-Saturated and Saturated CTR vs. LED Current Figure 7. Normalized Non-saturated and saturated CTR vs. LED Current 1.5 ICE - Collector Current - mA NCTR - Normalized CTR Normalized to: VCE = 10 V, IF = 10 mA, TA= 25C CTRce(sat) VCE = 0.4 V 1.0 TA= 50C 35 30 25 20 15 10 5 0 25C 85C 70C 50C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100 I F - LED Current - mA 0 iIL352_08 10 20 30 40 50 60 iIL352_05 IF - LED Current - mA Figure 5. Normalized Non-saturated and Saturated CTR vs. LED Current Figure 8. Collector-Emitter Current vs. Temperature and LED Current www.vishay.com 4 Document Number 83624 Rev. 1.5, 26-Oct-04 IL352 Vishay Semiconductors 10 5 ICEO - Collector-Emitter - nA 10 Normalized to: IF = 10 mA, TA = 25C Normalized Photocurrent 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 iIL352_12 1 VCE = 10 V TYPICAL .1 NIB-TA = -20C NIb, TA = 25C NIb, TA = 50C NIb, TA = 70C .01 .1 1 10 100 TA - Ambient Temperature - C iIL352_09 IF - LED Current - mA Figure 9. Collector-Emitter Leakage Current vs.Temp. Figure 12. Normalized Photocurrent vs. IF and Temp. 1.5 NCTRcb - Normalized CTRcb tpLH - Propagation Delay s 1000 2.5 tpHL - Propagation Delay s 1.0 Normalized to: IF =10 mA VCB = 9.3 V TA = 25C TA = 25C, IF = 10 mA VCC = 5 V, Vth = 1.5 V tpHL 100 2.0 0.5 25C 50C 70C 0.0 .1 1 10 100 IF - LED Current - mA 10 tpLH 1 .1 1 10 100 RL - Collector Load Resistor - k 1.5 1.0 iIL352_10 iIL352_13 Figure 10. Normalized CTRcb vs. LED Current and Temperature Figure 13. Propagation Delay vs. Collector Load Resistor 1000 TA = 25C 100 ICB - Collector Base Photocurrent - A ICB = 1.0357 *IF ^1.3631 10 1 .1 .01 .1 1 10 IF - LED Current - mA 100 iIL352_11 Figure 11. Collector-Base Photocurrent vs. LED Current Document Number 83624 Rev. 1.5, 26-Oct-04 www.vishay.com 5 IL352 Vishay Semiconductors Package Dimensions in Inches (mm) Pins 6&7 R .010(.25) .224 (5.7) .346 (8.79) .216 (5.5) .326 (8.3) .050 (1.27) .086 (2.18) .014 (.36) .036 (.91) .045 (1.14) .266 (6.76) .356 (9.04) .230 (5.84) .224 (5.69) .017 (.43) .013 (.33) .047 (1.19) .037 (.94) .091 (2.3) .083 (2.1) .040 (1.02) .036 (.91) .050 (1.27) Typ. .016 (.41) Typ. .006 (.15) 10 Typ. All 8 sides .301 (7.65) .281 (7.14) ISO Method A 40 3-7 i178011 www.vishay.com 6 Document Number 83624 Rev. 1.5, 26-Oct-04 IL352 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83624 Rev. 1.5, 26-Oct-04 www.vishay.com 7 |
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